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isc Silicon NPN Power Transistor 2SD1266DESCRIPTIONLow Collector Saturation Voltage: V = 1.2V(Max)@ I = 3ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 60V (Min)(BR)CEOGood Linearity of hFEComplement to Type 2SB941Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplification.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 60 VCBOV Collector-Emitter Voltage 60 VCEOV Emitter-Base Voltage 6 VEBOI Collector Current-Continuous 3 ACI Collector Current-Peak 5 ACMCollector Power Dissipation35@ T =25CP WCCollector Power Dissipation2@ T =25aT Junction Temperature 150 JT Storage Temperature Range -55~150 stg1isc websitewww.iscsemi.com isc & iscsemi is registered trademarkisc