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Power Transistors2SD1268Silicon NPN epitaxial planar typeFor power switchingUnit: mmComplementary to 2SB94310.0 0.2 4.2 0.25.5 0.2 2.7 0.2FeaturesLow collector to emitter saturation voltage VCE(sat) 3.1 0.1Satisfactory linearity of foward current transfer ratio hFELarge collector current ICFull-pack package which can be installed to the heat sink withone screw1.3 0.21.4 0.1+0.2Absolute Maximum Ratings (TC=25C)0.5 0.10.8 0.1Parameter Symbol Ratings Unit2.54 0.25Collector to base voltage VCBO 130 VCollector to emitter voltage VCEO 80 V 5.08 0.51 2 3Emitter to base voltage VEBO 7 V1:BasePeak collector current ICP 6 A2:Collector3:EmitterCollector current IC 3 ATO220 Full Pack Package(a)Collector power TC=25 C 30PC Wdissipation Ta=25 C 2Junction temperature Tj 150 CStorage temperat