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isc Silicon NPN Power Transistor 2SD1441DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBOV Collector-Emitter Voltage 1500 VCESV Emitter-Base Voltage 5 VEBOI Collector Current- Continuous 4 ACI Collector Current-Peak 15 ACPI Base Current-Peak 3.5 ABPCollector Power Dissipation2.5@ T = 25aP WCCollector Power Dissipation70@ T = 25CT Junction Temperature 130 JT Storage Temperature Range -55~130 stg1isc websitewww.iscsemi.com isc & iscsemi is registered trademarkisc Silicon NPN Power Transistor 2S