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2SD1609, 2SD1610Silicon NPN EpitaxialApplicationLow frequency high voltage amplifier complementary pair with 2SB1109 and 2SB1110OutlineTO-126 MOD1. Emitter2. Collector3. Base123Absolute Maximum Ratings (Ta = 25C)RatingsItem Symbol 2SD1609 2SD1610 UnitCollector to base voltage VCBO 160 200 VCollector to emitter voltage VCEO 160 200 VEmitter to base voltage VEBO 55VCollector current IC 100 100 mACollector power dissipation PC 1.25 1.25 WJunction temperature Tj 150 150 CStorage temperature Tstg 45 to +150 45 to +150 C2SD1609, 2SD1610Electrical Characteristics (Ta = 25C)2SD1609 2SD1610Item Symbol Min Typ Max Min Typ Max Unit Test conditionsCollector to base V(BR)CBO 160 200 V IC = 10 A, IE = 0breakdown voltageCollector to emitter V(BR)CEO 160 200 V IC = 1 mA, RBE = breakdown vo