Скачать даташит для 2sd1614:

SMD Type TransistorsNPN Transistors2SD16141.70 0.1 Features High DC Current Gain:hFE 135 to 600. Low VCE(sat) Complementary to 2SB11140.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 20 V Emitter - Base Voltage VEBO 6 Collector Current - Continuous IC 2A Collector Current - Pulse (Note.1) ICP 3 Collector Power Dissipation PC 2 W Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150Note.1:PW 10 ms, Duty cycle 20%. Electrical Characteristics Ta = 25Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 uA IE= 0 40 Collector- emitter breakdown voltage VCEO Ic= 1 mAIB= 0 20 V Emitter - base breakdown voltage VE