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2SD1616A(NPN)TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Power dissipation MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 1 A Dimensions in inches and (millimeters)PC Collector Power Dissipation 750 mW Tj Junction Temperature 150 Tstg Storage Temperature -55 to150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNITCollector-base breakdown voltage V(BR)CBO IC= 10A , IE=0 120 VCollector-emitter breakdown voltage V(BR)CEO IC= 2mA , IB=0 60 VEmitter-base breakdown voltage V(BR)EBO IE= 10A, IC=0 6 VCollector cut-off current ICBO VCB=60V, IE=0 0.1 A Emitter cut-off