Скачать даташит для 2sd1619:

SMD Type TransistorsNPN Transistors2SD16191.70 0.1 Features Very small size making it easy to provide highdensity, small-sized hybrid ICs. Complementary to 2SB11190.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collector - Emitter Voltage VCEO 25 V Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 1A Collector Current - Pulse ICP 2 Collector Power Dissipation 0.5PC W (Note.1) 1.3 Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150Note.1:Mounted on ceramic board (250mm 2 0.8mm) Electrical Characteristics Ta = 25Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 uA IE= 0 25 Collector- emitter breakdown voltage VCEO Ic= 1 mARB