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SMD Type MOSFETP-Channel MOSFET2SJ203SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4 -0.13 Features VDS (V) =-16V ID =-200m A1 2 RDS(ON) 23 (VGS =-2.5V)+0.02+0.10.15 -0.020.95 -0.1+0.11.9 -0.2 RDS(ON) 10 (VGS =-4V)1. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -16V Gate-Source Voltage VGS 7 Continuous Drain Current ID -200mA Pulsed Drain Current (Note.1) IDM -400 Power Dissipation PD 200 mW Junction Temperature TJ 150 Operating Temperature Topt -55 to 80 Junction Storage Temperature Range Tstg -55 to 150Note.1: PW 10ms,Duty Cycle 50% Electrical Characteristics Ta = 25Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=-250A, VGS=0V -16 V Zero Gate Voltage Dra