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SMD Type MOSFETP-Channel MOSFET2SJ461SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features VDS (V) =-50V1 2 ID =-0.1 A+0.1+0.050.95 -0.1 0.1 -0.01 RDS(ON) 50 (VGS =-4V) 1.9+0.1-0.1 RDS(ON) 100 (VGS =-2.5V)1. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -50V Gate-Source Voltage VGS 7 Continuous Drain Current ID -0.1A Pulsed Drain Current Note.1) IDM -0.2 Power Dissipation PD 0.2 W Junction Temperature TJ 150 Junction Storage Temperature Range Tstg -55 to 150Note.1: PW 10 ms, duty cycle 1% Electrical Characteristics Ta = 25Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=-250A, VGS=0V -50 V Zero Gate Voltage Drain Current IDSS VDS=-50V, VGS=0V -1 uA Gat