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SMD Type MOSFETP-Channel MOSFET2SJ492-ZJ Features VDS (V) =-60V ID =-20 A RDS(ON) 100m (VGS =-10V) RDS(ON) 185m (VGS =-4V) Low Ciss: Ciss = 1210 pF (TYP.)DrainBodyGate DiodeGateProtectionSourceDiode Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -60VVGS(AC) 20 Gate-Source Voltage (Note.1)VGS(DC)-20,0 Continuous Drain Current ID -20A Pulsed Drain Current (Note.2) IDM -80 Single Avalanche Current (Note.3) IAS -2070Tc = 25 Power Dissipation PD W1.5Ta = 25 Single Avalanche Energy (Note.3) EAS 40 mJ Thermal Resistance.Junction- to-Ambient RthJA 83.3/W Thermal Resistance.Junction- to-Case RthJC 1.79 Junction Temperature TJ 150 Junction Storage Temperature Range Tstg -55 to 150Note.1: f = 20 kHz, Duty Cycle 10% (+S