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Ordering number:ENN6178AP-Channel Silicon MOSFET2SJ502Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance.unit:mm Ultrahigh-speed switching.2091A 4V drive.[2SJ502]0.40.1630 to 0.11 0.95 20.951.92.91 : Gate2 : Source3 : DrainSANYO : CPSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 30 VGate-to-Source Voltage VGSS 20 VDrain Current (DC) ID 0.5 ADrain Current (Pulse) IDP PW 10 s, duty cycle 1% 2.0 AAllowable Power Dissipation PD 0.25 WChannel Temperature Tch 150 CStorage Temperature Tstg 55 to +150 CElectrical Characteristics at Ta = 25CRatingsParameter Symbol Conditions Unitmin typ maxDrain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0 30 VZero-Gate Voltage Drai