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2SJ531 Silicon P Channel MOS FET REJ03G0881-0300 (Previous: ADE-208-646A) Rev.3.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.050 typ. Low drive current. 4 V gate drive devices. High speed switching. Outline RENESAS Package code: PRSS0003AE-A(Package name: TO-220CFM)D1. GateG2. Drain3. Source123SRev.3.00 Sep 07, 2005 page 1 of 7 2SJ531 Absolute Maximum Ratings (Ta = 25C) Item Symbol Value UnitDrain to source voltage V 60 VDSSGate to source voltage V 20 VGSSDrain current I 18 ADDrain peak current I Note 1 72 AD (pulse)Body to drain diode reverse drain current I 18 ADRAvalanche current I Note 3 18 AAPAvalanche energy E Note 3 27 mJARChannel dissipation Pch Note 2 30 WChannel temperature Tch 150 C Stora