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2SK3471 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3471 Switching Regulator and DC-DC Converter Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 10 (typ.) High forward transfer admittance: |Yfs| = 0.4 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 500 V) Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-source voltage VDSS 500 VDrain-gate voltage (RGS = 20 k) VDGR 500 VGate-source voltage VGSS 30 VDC (Note 1) ID 0.5Drain current A Pulse (Note 1) IDP 1.5Drain power dissipation PD 0.5 WDrain power dissipation (Note 2) PD 1.5 WJEDEC Single pulse avalanche energy EAS 14.3 mJ(Note 3)JEITA SC-62Avalanche current IAR 0.5 ATOSHIBA 2-5K1BRepetitive avalanche energy (Note