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2SK3846 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSIII) 2SK3846 Switching Regulator, DC/DC Converter and Motor Drive Unit: mmApplications Low drain-source ON resistance : RDS (ON) = 12 m (typ.) High forward transfer admittance : |Yfs| = 33 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 40 V) Enhancement mode : Vth = 1.5~2.5 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitDrainsource voltage VDSS 40 VDraingate voltage (RGS = 20 k) VDGR 40 V Gatesource voltage VGSS 20 VDC (Note 1) ID 26 ADrain current Pulse (Note 1) IDP 78 ADrain power dissipation (Tc = 25C) PD 25 WJEDEC Single-pulse avalanche energy EAS 63 mJ(Note 2)JEITA SC-67Avalanche current IAR 26 ATOSHIBA 2-10R1BRepetitive avalanche energy (Note 3) EAR 2.5 mJWeight: 1.9 g (