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AOT29S50/AOB29S50/AOTF29S50TM500V 29A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 600VThe AOT29S50 & AOB29S50 & AOTF29S50 have beenfabricated using the advanced MOSTM high voltage IDM 120Aprocess that is designed to deliver high levels of RDS(ON),max 0.15performance and robustness in switching applications. Qg,typ 26.6nCBy providing low RDS(on), Qg and EOSS along with Eoss @ 400V 6.3Jguaranteed avalanche capability these parts can beadopted quickly into new and existing offline power supplydesigns.100% UIS Tested100% Rg Tested For Halogen Free add "L" suffix to part number: AOT29S50L & AOB29S50L & AOTF29S50LTop ViewTO-263TO-220 TO-220FDD2PAK DGSS SD DGG S GAOT29S50AOTF29S50AOB29S50Absolute Maximum Ratings TA=25C unless otherwise notedParameter Symbol AOT29S50/A

 

Ключевые слова - ALL TRANSISTORS DATASHEET

 aob29s50.pdf Проектирование, MOSFET, Мощность

 aob29s50.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 aob29s50.pdf База данных, Инновации, ИМС, Транзисторы

 

 
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