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DTO-247GAPT1001RBN 1000V 11.0A 1.00SAPT5030BN 500V 21.0A 0.30POWER MOS IVN- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.APTSymbol Parameter 1001RBN UNITVDSS Drain-Source Voltage1000 VoltsID Continuous Drain Current @ TC = 25C11AmpsIDM Pulsed Drain Current 144VGS Gate-Source Voltage30 VoltsTotal Power Dissipation @ TC = 25C 310 WattsPDLinear Derating Factor 2.48 W/CTJ,TSTG Operating and Storage Junction Temperature Range-55 to 150CTL Lead Temperature: 0.063" from Case for 10 Sec.300STATIC ELECTRICAL CHARACTERISTICSSymbol Characteristic / Test Conditions / Part Number MIN TYP MAX UNITAPT1001RBN 1000Drain-Source Breakdown VoltageBVDSSVolts(VGS = 0V, ID = 250 A)On State Drain Current 2 APT1001RBN 11ID(ON)Amps(VDS > ID(ON)