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PD - 96323AUTOMOTIVE MOSFETAUIRFR2607ZHEXFET Power MOSFETFeaturesV(BR)DSS75VDl Advanced Process TechnologyRDS(on) typ.l Ultra Low On-Resistance 17.6ml 175C Operating Temperaturemax. 22ml Fast Switching Gl Repetitive Avalanche Allowed up to TjmaxID (Silicon Limited) 45A Sl Lead-Free, RoHS CompliantID (Package Limited) 42A l Automotive Qualified *DescriptionDSpecifically designed for Automotive applications, thisHEXFET Power MOSFET utilizes the latest processingtechniques to achieve extremely low on-resistance perSsilicon area. Additional features of this design are a 175CDjunction operating temperature, fast switching speed andGimproved repetitive avalanche rating . These featuresD-Pakcombine to make this design an extremely efficient andAUIRFR2607Zreliable device for use in Automotive applications and a
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auirfr2607ztr.pdf Проектирование, MOSFET, Мощность
auirfr2607ztr.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник
auirfr2607ztr.pdf База данных, Инновации, ИМС, Транзисторы



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