Скачать даташит для auirfr2905ztr:

PD - 96320AUTOMOTIVE GRADEAUIRFR2905ZHEXFET Power MOSFETV(BR)DSS55VFeaturesDl Advanced Process TechnologyRDS(on) typ.11.1ml Ultra Low On-Resistancel 175C Operating Temperature max. 14.5mGl Fast SwitchingID (Silicon Limited) 59A l Repetitive Avalanche Allowed up to TjmaxSl Lead-Free, RoHS CompliantID (Package Limited) 42A l Automotive Qualified *DDescriptionSpecifically designed for Automotive applications, this HEXFETPower MOSFET utilizes the latest processing techniques toachieve extremely low on-resistance per silicon area. Additional SDfeatures of this design are a 175C junction operatingGtemperature, fast switching speed and improved repetitiveD-Pakavalanche rating . These features combine to make this designAUIRFR2905Zan extremely efficient and reliable device for use in Automotiveapplications and a