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PD - 97492AUIRFR3504ZAUTOMOTIVE GRADEHEXFET Power MOSFETFeatures Advanced Process TechnologyDV(BR)DSS 40V Low On-Resistance 175C Operating TemperatureRDS(on) max.9.0m Fast SwitchingGID (Silicon Limited) 77A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS CompliantID (Package Limited)42AS Automotive Qualified *DescriptionDSpecifically designed for Automotive applications,this HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely low on-Sresistance per silicon area. Additional features ofGthis design are a 175C junction operating tempera-D-Pakture, fast switching speed and improved repetitiveavalanche rating . These features combine to makethis design an extremely efficient and reliable deviceGDSfor use in Automotive applications and a wide variety Gate Drain Sourceo