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PD - 97452AAUIRFR4104AUTOMOTIVE GRADEAUIRFU4104HEXFET Power MOSFETFeatures Advanced Process TechnologyD Ultra Low On-ResistanceV(BR)DSS 40V 175C Operating TemperatureRDS(on) max.5.5m Fast SwitchingG Repetitive Avalanche Allowed up to TjmaxID (Silicon Limited)119A Lead-Free, RoHS CompliantSID (Package Limited) 42A Automotive Qualified *DescriptionDSpecifically designed for Automotive applications, thisHEXFET Power MOSFET utilizes the latest processingtechniques to achieve extremely low on-resistance perSSsilicon area. Additional features of this design are aDGG175C junction operating temperature, fast switchingD-PakI-Pakspeed and improved repetitive avalanche rating . TheseAUIRFR4104AUIRFU4104features combine to make this design an extremelyefficient and reliable device for u