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PD - 97544AUTOMOTIVE GRADE AUIRFR4105ZAUIRFU4105ZHEXFET Power MOSFETFeaturesD Advanced Process TechnologyV(BR)DSS55V Ultra Low On-Resistance 175C Operating TemperatureRDS(on) max.24.5mG Fast Switching Repetitive Avalanche Allowed up to Tjmax IDS 30A Lead-Free, RoHS Compliant Automotive Qualified *DescriptionDSpecifically designed for Automotive applications,this HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely low on- SSresistance per silicon area. Additional features of this DGGD-Pakdesign are a 175C junction operating temperature, I-PakAUIRFR4105Zfast switching speed and improved repetitive ava- AUIRFU4105Zlanche rating . These features combine to make thisdesign an extremely efficient and reliable device forGDSuse in Automotive applications and a