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PD-96341AUTOMOTIVE MOSFETAUIRFR5305AUIRFU5305HEXFET Power MOSFETDFeaturesV(BR)DSS -55V Advanced Planar Technology Low On-ResistanceRDS(on) max.0.065 Dynamic dV/dT Rating G 175C Operating Temperature Fast Switching S ID -31A Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant DD Automotive Qualified *SDescriptionSDG DGSpecifically designed for Automotive applications, this CellularD-Pak I-PakPlanar design of HEXFET Power MOSFETs utilizes theAUIRFR5305 AUIRFU5305latest processing techniques to achieve low on-resistance persilicon area. This benefit combined with the fast switchingGDSspeed and ruggedized device design that HEXFET powerGate Drain SourceMOSFETs are well known for, provides the designer with anextremely efficient and reliable device for use in Automotive