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AUTOMOTIVE GRADEAUIRFS8407-7PFeaturesHEXFET Power MOSFET Advanced Process TechnologyD New Ultra Low On-ResistanceVDSS 40V 175C Operating TemperatureRDS(on) typ.1.0m Fast Switching Repetitive Avalanche Allowed up to Tjmax max. 1.3m Lead-Free, RoHS CompliantGID (Silicon Limited) 306A Automotive Qualified *DescriptionID (Package Limited) 240A SSpecifically designed for Automotive applications, thisHEXFET Power MOSFET utilizes the latest processingtechniques to achieve extremely low on-resistance per siliconDarea. Additional features of this design are a 175C junctionoperating temperature, fast switching speed and improvedrepetitive avalanche rating. These features combine to makethis design an extremely efficient and reliable device for use inSSAutomotive applications and wide variety of other