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AUIRFS8408AUTOMOTIVE GRADEAUIRFSL8408FeaturesHEXFET Power MOSFETl Advanced Process TechnologyVDSS 40Vl New Ultra Low On-Resistancel 175C Operating TemperatureRDS(on) typ. 1.3ml Fast Switching max. 1.6ml Repetitive Avalanche Allowed up to TjmaxID (Silicon Limited) 317Al Lead-Free, RoHS Compliantl Automotive Qualified *ID (Package Limited) 195A DescriptionSpecifically designed for Automotive applications, this HEXFETPower MOSFET utilizes the latest processing techniques to achieveDD Dextremely low on-resistance per silicon area. Additional featuresof this design are a 175C junction operating temperature, fastswitching speed and improved repetitive avalanche rating. Thesefeatures combine to make this product an extremely efficient and SSDreliable device for use in Automotive and wide variety of other GG Gapplicat