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BUK753R4-30B; BUK763R4-30BN-channel TrenchMOS standard level FETRev. 01 5 January 2006 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive (HPA) TrenchMOS technology.1.2 Features TrenchMOS technology Q101 compliant 175 C rated Standard level compatible1.3 Applications Automotive systems 12 V loads Motors, lamps and solenoids General purpose power switching1.4 Quick reference data EDS(AL)S 1.3 J RDSon = 2.9 m (typ) ID 75 A Ptot 255 W2. Pinning informationTable 1: PinningPin Description Simplified outline Symbol1 gate (G)Dmb mb2 drain (D)3 source (S)Gmb mounting base; connected to drain (D)mbb076 S21 3SOT404 (D2PAK)1 2 3SOT78 (TO-220AB)BUK753R4-30B; BUK763R4-30BPhilips Semicon