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CED20P06/CEU20P06P-Channel Enhancement Mode Field Effect TransistorFEATURES-60V, -13A, RDS(ON) = 125m @VGS = -10V. RDS(ON) = 175m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise notedParameter Symbol Limit UnitsDrain-Source Voltage VDS -60 VGate-Source Voltage VGS 20 VDrain Current-Continuous ID -13 ADrain Current-Pulsed a IDM -52 AMaximum Power Dissipation @ TC = 25 C 42 WPD- Derate above 25 C 0.29 W/ COperating and Store Temperature Range TJ,Tstg -55 to 175 CThermal CharacteristicsParameter Symbol Limit UnitsThermal Resistance, Junction-to-Case RJC 3.5 C/WThermal Resistance, Junction-to-Ambient