Скачать даташит для ced20p10_ceu20p10:

CED20P10/CEU20P10PRELIMINARYP-Channel Enhancement Mode Field Effect TransistorFEATURES-100V, -16A, RDS(ON) = 130m @VGS = -10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.DTO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise notedParameter Symbol Limit UnitsDrain-Source Voltage VDS -100 VGate-Source Voltage VGS 20 VDrain Current-Continuous ID -16 ADrain Current-Pulsed a IDM -64 AMaximum Power Dissipation @ TC = 25 C 75 WPD- Derate above 25 C 0.5 W/ CEASSingle Pulsed Avalanche Energy e 128 mJSingle Pulsed Avalanche Current e IAS16 AOperating and Store Temperature Range TJ,Tstg -55 to 175 CThermal CharacteristicsParameter Symbol Limit UnitsThermal Resistan