Справочник транзисторов.

 

Скачать даташит для ced4301_ceu4301:

ced4301_ceu4301ced4301_ceu4301

CED4301/CEU4301P-Channel Enhancement Mode Field Effect TransistorFEATURES-40V, -20A, RDS(ON) = 42m @VGS = -10V. RDS(ON) = 65m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise notedParameter Symbol Limit UnitsDrain-Source Voltage VDS -40 VGate-Source Voltage VGS 20 VDrain Current-Continuous ID -20 ADrain Current-Pulsed a IDM -80 AMaximum Power Dissipation @ TC = 25 C 31 WPD- Derate above 25 C 0.25 W/ COperating and Store Temperature Range TJ,Tstg -55 to 150 CThermal CharacteristicsParameter Symbol Limit UnitsThermal Resistance, Junction-to-Case RJC 4 C/WThermal Resistance, Junction-to-Ambient RJA

 

Ключевые слова - ALL TRANSISTORS DATASHEET

 ced4301 ceu4301.pdf Проектирование, MOSFET, Мощность

 ced4301 ceu4301.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 ced4301 ceu4301.pdf База данных, Инновации, ИМС, Транзисторы

 

 
Back to Top

 


 
.