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CEH2305P-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES-30V, -4.9A , RDS(ON) = 52m @VGS = -10V. RDS(ON) = 65m @VGS = -4.5V. RDS(ON) = 119m @VGS = -2.5V. High dense cell design for extremely low RDS(ON).D(1,2,5,6,)Rugged and reliable.Lead free product is acquired.TSOP-6 package.456G(3)321S(4)TSOP-6ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol Limit UnitsDrain-Source Voltage VDS -30 VGate-Source Voltage VGS 12 VDrain Current-Continuous ID -4.9 ADrain Current-Pulsed a IDM -20 AMaximum Power Dissipation PD 2.0 WOperating and Store Temperature Range TJ,Tstg -55 to 150 CThermal CharacteristicsParameter Symbol Limit UnitsThermal Resistance, Junction-to-Ambient b RJA 62.5 C/WThis is preliminary information on a new product in development now . Rev 1. 2006.Aughttp:/