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CEH2321P-Channel Enhancement Mode Field Effect TransistorFEATURES-20V, -4.8A, RDS(ON) = 55m @VGS = -4.5V. RDS(ON) = 62m @VGS = -2.5V.High dense cell design for extremely low RDS(ON).Rugged and reliable.D(1,2,5,6,)Lead-free plating ; RoHS compliant.TSOP-6 package.456G(3)321S(4)TSOP-6ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol Limit UnitsDrain-Source Voltage VDS -20 VGate-Source Voltage VGS 12 VDrain Current-Continuous ID -4.8 ADrain Current-Pulsed a IDM -19.2 AMaximum Power Dissipation PD 2.0 WOperating and Store Temperature Range TJ,Tstg -55 to 150 CThermal CharacteristicsParameter Symbol Limit UnitsThermal Resistance, Junction-to-Ambient b RJA 62.5 C/W2012.FebRev 4.Details are subject to change without notice http://www.cetsemi.com1CEH2321Electrical Characteristics TA = 25