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CEP04N6/CEB04N6CEF04N6PRELIMINARYN-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP04N6 600V 2.4 4.2A 10VCEB04N6 600V 2.4 4.2A 10VCEF04N6 600V 2.4 4.2A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.GSCEB SERIESCEP SERIES CEF SERIESTO-263(DD-PAK)TO-220 TO-220FABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise notedLimitParameter Symbol UnitsTO-220/263 TO-220FDrain-Source Voltage VDS 600 VGate-Source Voltage VGS V30Drain Current-Continuous @ TC = 25 C 4.2 4.2 d AID@ TC = 100 C A2.6 2.6 dDrain Current-Pulsed a IDM e 16.8 16.8 d AMaximum Power Dissipation @ TC = 25 C 104 35 WPD- Derate above 25 C 0.83 0.28 W/ CSingle Pulsed Avalanche Energy g EAS 242 mJIAS 4.4 ASingle Pulsed Avala