Скачать даташит для cet0215:

CET0215N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES150V, 2A, RDS(ON) = 440m @VGS = 10V.RDS(ON) = 580m @VGS = 6V.High dense cell design for extremely low RDS(ON).Rugged and reliable.DLead-free plating ; RoHS compliant.SOT-223 package.GDSDGSOT-223SABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol Limit UnitsDrain-Source Voltage VDS 150 VGate-Source Voltage VGS 20 VDrain Current-Continuous ID 2 ADrain Current-Pulsed a IDM 8 AMaximum Power Dissipation PD 3 WOperating and Store Temperature Range TJ,Tstg -55 to 150 CThermal CharacteristicsParameter Symbol Limit UnitsThermal Resistance, Junction-to-Ambient b RJA 42 C/WRev 2. 2011.NovThis is preliminary information on a new product in development now . Details are subject to change without notice . http://www.cetsemi.com