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Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTOR CMBT8050 PIN CONFIGURATION (NPN)1 = BASESOT-232 = EMITTER3 = COLLECTOR3Formed SMD Package12ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITSVCBOCollector Base Voltage 30 VVCEOCollector Emitter Voltage 25 VEmitter Base Voltage VEBO 6 VCollector Current Continuous IC 800 mACollector Dissipation @ Ta=25C PC 250 mWOperating And Storage Junction Tj, Tstg - 55 to +125 CTemperature RangeELECTRICAL CHARACTERISTICS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNITSCollector Base Voltage VCBO IC=100A, IE=0 30 VCollector Emitter Voltage VCEO IC=10mA, IB=0 25 VVEBOEmitter Base Voltage IE=10A, IC=0 6 VCollector Cut Off Current ICBO VCB=15V, IE=0 50 nAEmitter

 

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 cmbt8050.pdf Проектирование, MOSFET, Мощность

 cmbt8050.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 cmbt8050.pdf База данных, Инновации, ИМС, Транзисторы

 

 
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