Скачать даташит для cs12n70_a8h:

Silicon N-Channel Power MOSFET R CS12N70 A8H VDSS 700 V General Description ID 12 A CS12N70 A8H, the silicon N-channel Enhanced PD (TC=25) 140 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.64 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220AB, which accords with the RoHS standard. Features Fast Switching Low ON Resistance(Rdson0.75) Low Gate Charge (Typical Data:47nC) Low Reverse transfer capacitances(Typical:15pF) 100% Single Pulse avalanche energy Test Applications Power switch circuit of adaptor and charger. AbsoluteTc= 25 unless otherwise specified Symbol Parameter Rating Units