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Silicon N-Channel Power MOSFET R CS15N50F A9R General Description VDSS 500 V CS15N50F A9R, the silicon N-channel Enhanced VDMOSFETs, ID 15 A PD(TC=25) 70 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 0.3 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the RoHS standard. Features Fast Switching Low ON Resistance(Rdson0.4) Low Gate Charge (Typical Data:50nC) Low Reverse transfer capacitances(Typical:25.5pF) 100% Single Pulse avalanche energy Test Applications AutomotiveDC Motor Control and Class D Amplifier. AbsoluteTc= 25 unless otherwise specified Symbol Parameter Ratin

 

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 cs15n50f a9r.pdf Проектирование, MOSFET, Мощность

 cs15n50f a9r.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 cs15n50f a9r.pdf База данных, Инновации, ИМС, Транзисторы

 

 
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