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Product specificationDMP3160L P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-ResistanceIDV(BR)DSS RDS(on)TA = +25C Low Gate Threshold Voltage Low Input Capacitance 122m @ VGS = -10V -2.7A -30V Fast Switching Speed 190m @ VGS = -4.5V -2.0A Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Description Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High ReliabilityThis new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management Mechanical Data applications. Case: SOT23 Case Material: Molded Plastic, Green Molding Compound. Applications UL Flammability Classification R

 

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 dmp3160l.pdf Проектирование, MOSFET, Мощность

 dmp3160l.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 dmp3160l.pdf База данных, Инновации, ИМС, Транзисторы

 

 
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