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August 2000TMQFETQFETQFETQFETFQP70N0880V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 70A, 80V, RDS(on) = 0.017 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 75 nC)planar stripe, DMOS technology. Low Crss ( typical 180 pF)This advanced technology has been especially tailored to Fast switchingminimize on-state resistance, provide superior switching 100% avalanche testedperformance, and withstand high energy pulse in the Improved dv/dt capabilityavalanche and commutation mode. These devices are well 175C maximum junction temperature ratingsuited for low voltage applications such as automotive, highefficiency switching for DC/DC converters, and DC motorcontrol.DG TO-220G D SFQP SeriesSAbsolute Maximum