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TypeIPP060N06NOptiMOSTM Power-TransistorFeaturesProduct Summary Optimized for high performance SMPS, e.g. sync. rec.VDS 60 V 100% avalanche testedRDS(on),max 6.0 mW Superior thermal resistanceID 45 A N-channelQOSS nC 32 Qualified according to JEDEC1) for target applicationsQG(0V..10V) nC 27 Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21 PG-TO220-3 Type Package Marking IPP060N06N PG-TO220-3 060N06N Maximum ratings, at T =25 C, unless otherwise specifiedjParameter Symbol Conditions Value UnitI V =10 V, T =25 CContinuous drain current 45 AD GS CV =10 V, T =100 C45GS CV =10 V, T =25 C, GS C17R =50K/WthJAI T =25 C180Pulsed drain current2) D,pulse CI =45 A, R =25 W 60 mJAvalanche energy, single pulse3) E AS D GSVGate source voltage 20 VGS