Скачать даташит для ipp70n10s3l_ipb70n10s3l_ipi70n10s3l-12:

IPB70N10S3L-12IPI70N10S3L-12, IPP70N10S3L-12OptiMOS-T Power-TransistorProduct SummaryV 100 VDSR (SMD version) 12mDS(on),max I 70 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche testedType Package MarkingIPB70N10S3L-12 PG-TO263-3-2 3N10L12IPI70N10S3L-12 PG-TO262-3-1 3N10L12IPP70N10S3L-12 PG-TO220-3-1 3N10L12Maximum ratings, at T =25 C, unless otherwise specifiedjParameter Symbol Conditions Value UnitI T =25 C, V =10 VContinuous drain current 70 AD C GST =100 C, C48V =10 V1)GSI T =25 C280Pulsed drain current1) D,pulse CI =35A410 mJAvalanche energy, single pulse1) E AS DIAvalanche current, single pulse 70 AASV