Скачать даташит для irf5210lpbf_irf5210spbf:

PD - 97049BIRF5210SPbFIRF5210LPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = -100Vl 150C Operating Temperaturel Fast SwitchingRDS(on) = 60ml Repetitive Avalanche Allowed up to TjmaxGl Some Parameters are Different fromIRF5210S/LID = -38ASl P-Channell Lead-FreeDDDescriptionFeatures of this design are a 150C junctionoperating temperature, fast switching speed andSSimproved repetitive avalanche rating . These fea-DDGtures combine to make this design an extremely Gefficient and reliable device for use in a wideD2Pak TO-262variety of other applications. IRF5210LPbFIRF5210SPbFGDSGate Drain SourceAbsolute Maximum RatingsParameter Max. UnitsID @ TC = 25C -38 AContinuous Drain Current, VGS @ -10V ID @ TC = 100C -24Continuous Drain Current, VGS @ -10V IDM -140