Скачать даташит для irf5305s:

PD - 91386CIRF5305S/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF5305S)VDSS = -55V Low-profile through-hole (IRF5305L) 175C Operating TemperatureRDS(on) = 0.06 Fast SwitchingG P-ChannelID = -31A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. Thisbenefit, combined with the fast switching speed andruggedized device design that HEXFET Power MOSFETsare well known for, provides the designer with an extremelyefficient and reliable device for use in a wide variety ofapplications.The D2Pak is a surface mount power package capable ofaccommodating die sizes up to HEX-4. It provides the Pak TO-262highest power capability and the lowest possible on- D 2 resistance in any existin