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INCHANGE Semiconductorisc N-Channel Mosfet Transistor IRF730AFEATURESDrain Current I =5.5A@ T =25D CDrain Source Voltage-: V = 400V(Min)DSSFast Switching SpeedLow Drive RequirementMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitch Mode Power SupplyUninterruptable Power SupplyHigh speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 400 VDSSV Gate-Source Voltage-Continuous 30 VGSDrain Current-Continuous@ TC=25 5.5I ADDrain Current-continuous@ TC=100 3.5I Drain Current-Single Plused 22 ADMP Total Dissipation @T =25 74 WD CT Max. Operating Junction Temperature 150 jStorage Temperature -55~150 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNIT/WR Thermal Resistance,J