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Advanced Power MOSFETFEATURESBVDSS = 400 V Avalanche Rugged TechnologyRDS(on) = 1.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = 5.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 400V Lower RDS(ON) : 0.765 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value UnitsVDSS Drain-to-Source Voltage V400Continuous Drain Current (TC=25 )5.5IDAContinuous Drain Current (TC=100 )3.51IDM Drain Current-Pulsed O 22 AVGS Gate-to-Source Voltage _ V2EAS Single Pulsed Avalanche Energy 346 mJOIAR Avalanche Current 15.5 AOEAR Repetitive Avalanche Energy 17.3 mJO3dv/dt Peak Diode Recovery dv/dt V/ns4.0 OTotal Power Dissipation (TC=25 )73 WPDLinear Derating Factor W/ 0.58 Operating Junct