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PD - 9.1245BPRELIMINARY IRF7403HEXFET Power MOSFET Generation V TechnologyA Ultra Low On-Resistance A1 8S D N-Channel MosfetVDSS = 30V2 7S D Surface Mount3 6 Available in Tape & ReelS D Dynamic dv/dt Rating4 5G DRDS(on) = 0.022 Fast SwitchingTop ViewDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistance per silicon area. Thisbenefit, combined with the fast switching speed and ruggedized device design thatHEXFET Power MOSFETs are well known for, provides the designer with anextremely efficient device for use in a wide variety of applications.The SO-8 has been modified through a customized leadframe for enhancedthermal characteristics and multiple-die capability making it ideal in a variety ofpower applications. With these improvem