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Advanced Power MOSFETFEATURESBVDSS = 400 V Avalanche Rugged TechnologyRDS(on) = 0.55 Rugged Gate Oxide Technology Lower Input CapacitanceID = 10 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 400V Lower RDS(ON) : 0.437 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value UnitsVDSS Drain-to-Source Voltage V400oContinuous Drain Current (TC=25 C)10IDAoCContinuous Drain Current (TC=100 )6.3IDM Drain Current-Pulsed 1 40 AOVGS Gate-to-Source Voltage _ VEAS Single Pulsed Avalanche Energy 2 mJ457OIAR Avalanche Current 1 10 AOEAR Repetitive Avalanche Energy 1 mJ13.4O3dv/dt Peak Diode Recovery dv/dt V/ns4.0 OTotal Power Dissipation (TC=25 oC )134 WPDLinear Derating Factor W/ o 1.08 COperating Junction a