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IRF740LC, SiHF740LCVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 400 Reduced Gate Drive Requirement AvailableRDS(on) ()VGS = 10 V 0.55 Enhanced 30 V VGS RatingRoHS*COMPLIANTQg (Max.) (nC) 39 Reduced Ciss, Coss, CrssQgs (nC) 10 Extremely High Frequency OperationQgd (nC) 19 Repetitive Avalanche Rated Compliant to RoHS Directive 2002/95/ECConfiguration SingleDDESCRIPTIONThis new series of low charge Power MOSFETs achieveTO-220ABsignificantly lower gate charge over conventional MOSFETs.Utilizing the new LCDMOS technology, the deviceimprovements are achieved without added product cost,Gallowing for reduced gate drive requirements and totalsystem savings. In addition, reduced switching losses andimproved efficiency are achievable in a variety of highSfrequency application