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irfp3710irfp3710

isc N-Channel MOSFET Transistor IRFP3710IIRFP3710FEATURESStatic drain-source on-resistance:RDS(on)25mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingFully Avalanche RatedABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100 VDSSV Gate-Source Voltage 20 VGSI Drain Current-Continuous 57 ADI Drain Current-Single Pulsed 180 ADMP Total Dissipation @T =25 200 WD CT Max. Operating Junction Temperature 175 jT Storage Temperature -55~175 stgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITChannel-to-case thermal resistance/WRth(j-c) 0.75Channel-to-ambient thermal resistance/WRth(j-a) 621isc websitewww.iscsemi.cn isc & iscsemi is registered tradem

 

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 irfp3710.pdf Проектирование, MOSFET, Мощность

 irfp3710.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 irfp3710.pdf База данных, Инновации, ИМС, Транзисторы

 

 
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