Скачать даташит для irfp440a:

Advanced Power MOSFETFEATURESBVDSS = 500 V Avalanche Rugged TechnologyRDS(on) = 0.85 Rugged Gate Oxide Technology Lower Input CapacitanceID = 8.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 500V Lower RDS(ON) : 0.638 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value UnitsVDSS Drain-to-Source Voltage V500oContinuous Drain Current (TC=25 C)8.5IDAoCContinuous Drain Current (TC=100 )5.4IDM Drain Current-Pulsed 1 34 AOVGS Gate-to-Source Voltage _ VEAS Single Pulsed Avalanche Energy 2 mJ602OIAR Avalanche Current 1 8.5 AOEAR Repetitive Avalanche Energy 1 mJ16.2O3dv/dt Peak Diode Recovery dv/dt V/ns3.5 OTotal Power Dissipation (TC=25 oC )162 WPDLinear Derating Factor W/ oC1.3 Operating Junction