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D I I TI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures Optimized for medium operatingVCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighterVCE(on) typ. = 1.45VG parameter distribution and higher efficiency than Generation 3@VGE = 15V, IC = 39AE Industry standard TO-247AC packagen-channelBenefits Generation 4 IGBT's offer highest efficiency available IGBT's optimized for specified application conditions Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT'sTO-247ACAbsolute Maximum RatingsParameter Max. UnitsVCES Collector-to-Emitter Breakdown Voltage 600 VIC @ TC = 25C Continuous Collector Current 70IC @ TC = 100C Continuous Collector Current

 

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 irg4pc50f.pdf Проектирование, MOSFET, Мощность

 irg4pc50f.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 irg4pc50f.pdf База данных, Инновации, ИМС, Транзисторы

 

 
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