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PD 91469BIRG4PC50FD Fast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures Fast: Optimized for medium operatingVCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).VCE(on) typ. = 1.45V Generation 4 IGBT design provides tighterG parameter distribution and higher efficiency than Generation 3 @VGE = 15V, IC = 39AE IGBT co-packaged with HEXFREDTM ultrafast,n-channel ultra-soft-recovery anti-parallel diodes for use in bridge configurations Industry standard TO-247AC packageBenefits Generation -4 IGBT's offer highest efficiencies available IGBT's optimized for specific application conditions HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbing Des

 

Ключевые слова - ALL TRANSISTORS DATASHEET

 irg4pc50fd.pdf Проектирование, MOSFET, Мощность

 irg4pc50fd.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 irg4pc50fd.pdf База данных, Инновации, ИМС, Транзисторы

 

 
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